Today, with the acceleration of the industrialization of third-generation semiconductor materials, silicon carbide (SiC) is fully penetrating from traditional high-temperature applications to strategic emerging industries such as semiconductors and new energy with its core advantages such as high power density, high pressure and high temperature resistance, and low energy consumption. As a leading enterprise in the field of silicon carbide for 30 years, Shenyang Starlight Technology Ceramics has witnessed and participated in the whole process of China's silicon carbide industry from germination to growth, and has successfully realized the cross-border expansion of product application scenarios with profound technical accumulation and continuous innovation breakthroughs, setting a benchmark for domestic substitution in the field of semiconductor manufacturing. The superior characteristics of silicon carbide materials are the core confidence for Shenyang Starlight to achieve cross-border breakthroughs. With a melting point of up to 2730°C, it can maintain structural stability even after long-term use below 1600°C, with a coefficient of thermal expansion of only 4.0×10⁻⁶/K, and a high thermal conductivity of 120-150 W/(m・K), making it perfectly suitable for the harsh environments of semiconductor manufacturing. Compared with traditional silicon-based materials, silicon carbide has outstanding performance in chemical corrosion resistance and low particle release, giving it irreplaceable advantages in precision processing such as wafer manufacturing. In the crystal growth process of 12-inch wafers, the silicon carbide crucible support produced by the company can stably bear the load at high temperatures above 1400°C, avoiding the softening and tilting of the quartz crucible; In slicing, grinding and other processes, silicon carbide ceramic fixtures and grinding discs can control wafer thickness errors at the micron level with their high hardness and low pollution characteristics, significantly improving chip yield. Thirty years of deep technical cultivation have enabled Shenyang Starlight to achieve a successful leap from the traditional high-temperature field to the semiconductor track. As early as the 90s of the last century, the company focused on the basic research and development of silicon carbide ceramics, and gradually extended its products to the whole process of wafer manufacturing with the continuous improvement of material performance requirements in the semiconductor industry. Today, the company's silicon carbide products have covered core links such as crystal growth thermal field components, slicing guide rings, and polishing pad supports, replacing traditional metals and ordinary ceramic materials in the manufacturing of high-voltage and high-power semiconductor devices, and solving the pain points of the industry such as easy corrosion and poor dimensional stability of traditional materials. Especially in the production of high-end devices such as SiC IGBTs, the silicon carbide substrate support materials provided by the company provide a key guarantee for the localization of high-voltage devices above 18 kV in China.

Talent is the core driving force behind technological innovation. Shenyang Starlight consistently aligns employee skill enhancement with the latest industry trends. In response to the rapid technological iterations in the semiconductor field, the company has established a continuous training mechanism, inviting industry experts to conduct specialized lectures on topics such as third-generation semiconductor material applications and 8-inch/12-inch wafer processing technologies, and organizing technical teams to study the latest advancements in low-temperature ohmic contacts, trench processes, and more. Through technical exchanges with research institutes and participation in industry summits, employees continuously track changes in demand across application areas such as smart grids and new energy vehicles, ensuring that product development is closely aligned with market needs. This dual-drive model of 'technology R&D and talent cultivation' enables the company to maintain a competitive edge in addressing the 'last mile' challenges of large-scale silicon carbide device applications. Positioned at the forefront of the large-scale application of the silicon carbide industry, Shenyang Starlight will continue to build on thirty years of technological accumulation, focusing on material innovation and process optimization in the semiconductor field, keeping pace with industry trends such as the commercialization of 12-inch silicon carbide substrates and ultra-high voltage device applications, and supporting the autonomous and controllable development of China's semiconductor industry with higher-quality products, while writing a new chapter in the blue ocean market of third-generation semiconductor materials.